![]() This short channel was enabled by printing silver nanoparticle ink solutions with differing chemical compositions (repulsive) next to each other for the source and drain. Overcoming these limitations, in this paper, we demonstrate 100% inkjet printed transistors with channel lengths in the range of 300 nm to 2 μm. Moreover, single drop printing and surface modification increases the extra steps involved and makes the process complicated, since additional contact pads need to be precisely aligned and printed to interface with the drop pattern for transistor development. This wait time is detrimental in a high-rate manufacturing process. This high yield was possible by letting the inks dry for 340 s to complete the process of dewetting before curing them. 12 through printing single droplets next to a bar. ![]() Yield was improved to >94% by Caironi et al. While ultra-short gaps were achieved, the yield was poor. 10, 11, 200–400 nm printed gaps using a self-aligned printing (SAP) process was demonstrated, in which, after printing one silver ink, its surface properties were modified to make it repel the next silver ink printed directly on top or next to it. Recently, a print-and-drag (PND) method was demonstrated to provide 2–13 μm channels 9, and another process relying on mechanically splitting a printing metal pad by dragging a probe tip across to produce channels in the range of 200 nm–600 nm was demonstrated 9, however, these methods are not scalable or compatible with additive manufacturing processes. While these methodologies allow for micron order feature sizes 4, they still require lithographically defined patterns/masks, minimizing the unique flexibility and low cost options that printing allows. Several different methodologies have been developed for working around the fundamental printed channel length limitations, such as imprinting 7, 8 and flexographic printing 4. For printed transistors to be viable in most modern applications, a much shorter channel is required.įor printed technology to satisfy the current day requirements and become sustainable in the future, channel lengths under 1 μm are required. For example, a 10 micron channel length places the channel length of a printed transistor on par with silicon microelectronic devices made in the early 1970’s 6, severely limiting their utility in applications requiring high frequency operation. However, for transistors, this feature size leaves much to be desired. While these methodologies allow for micron order feature sizes 5, they require lithographically defined patterns/masks, minimizing the unique flexibility that inkjet printing allows.įor many applications, a feature size of ~30 microns is sufficient to have a major impact. Several different methodologies have been developed for working around these limitations, such as imprinting 3 or flexographic printing 4. One of the more difficult ones is the feature size, which is currently limited to ~30 microns using traditional inkjet methods 2. Based on its compatibility with flexible substrates and high production rates promised via the use of roll-to-roll (R2R) methodologies 1, printed electronics has the potential to open doors to new types of devices and development paradigms.ĭespite the great promise of this field, many of the existing technologies have significant limitations. In recent years, printed electronics has quickly emerged as an area of great interest in manufacturing.
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